sot23 silicon epitaxial schottky barrier single and dual diodes issue 3? july 95 ? partmarking details single diode ? l4z common anode ? l42 series ? l43 common cathode ? l44 features low v f high current capability applications p.s.u. mobile telecomms. & scsi absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 30 v forward current i f 200 ma forward voltage v f 400 mv power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br)r 30 v i r =10ma forward voltage v f 500 240 320 400 500 1000 mv mv mv mv mv i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma reverse current i r 4 a v r =25v diode capacitance c d 10 pf f=1mhz,v r =1v reverse recover time t rr 5 ns switched from i f =10ma to i r =10ma r l =100 , measured at i r =1ma 1 3 1 3 2 single diode common cathode bat54 bat54c common anode series bat54s bat54a 1 3 2 1 2 3 bat54
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